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PDF BAT54SWT1 Data sheet ( Hoja de datos )
| Número de pieza | BAT54SWT1 | |
| Descripción | 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAT54SWT1/D
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54SWT1
Motorola Preferred Device
30 VOLT
DUAL SERIES
SCHOTTKY BARRIER
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
3
1
2
CASE 419 – 02, STYLE 9
SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 Volts
PF
200 mW
1.6 mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
DEVICE MARKING
IF
200 Max
mA
TJ
125 Max
°C
Tstg
– 55 to +150
°C
BAT54SWT1 = B8
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
30
—
—
—
—
—
—
— — Volts
7.6 10 pF
0.5 2.0 µAdc
0.22 0.24 Vdc
0.41 0.5 Vdc
0.52 1.0 Vdc
— 5.0 ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
VF — 0.29 0.32 Vdc
VF — 0.35 0.40 Vdc
IF — — 200 mAdc
IFRM
—
— 300 mAdc
IFSM
—
— 600 mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
©MMoottoorroolal,aInSc.m19a9ll7–Signal Transistors, FETs and Diodes Device Data
5–1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAT54SWT1.PDF ] | |
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