BAT54LT1 반도체 회로 부품 판매점
30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAT54LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
1
ANODE
BAT54LT1
Motorola Preferred Device
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
Forward Current (DC)
Junction Temperature
Storage Temperature Range
DEVICE MARKING
IF
TJ
Tstg
BAT54LT1 = LV3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
VF
VF
IF
IFRM
IFSM
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
©MMoottoororloal,aInSc.m19a9l7l–Signal Transistors, FETs and Diodes Device Data
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Value
30
200
2.0
200 Max
125 Max
– 55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
Min Typ Max Unit
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
5–1
BAT54LT1
+10 V
820 Ω
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10 1 50°C
1000
TA = 150°C
100
10
TA = 125°C
1 25°C
1.0
85°C
25°C
– 40°C – 55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.6
1.0
0.1
0.01
0.001
0
TA = 85°C
TA = 25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
5–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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BAT54LT1 diode
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