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BAT54A 반도체 회로 부품 판매점

Surface Mount Schottky Barrier Diodes



Vishay Telefunken 로고
Vishay Telefunken
BAT54A 데이터시트, 핀배열, 회로
www.vishay.com
BAT54, BAT54A, BAT54C, BAT54S
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
BAT54
3
Top View
BAT54A
3
12
12
BAT54C
3
BAT54S
3
Top View
12
12
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAT54
BAT54A
BAT54C
BAT54S
ORDERING CODE
BAT54-E3-08 or BAT54-E3-18
BAT54-HE3-08 or BAT54-HE3-18
BAT54A-E3-08 or BAT54A-E3-18
BAT54A-HE3-08 or BAT54A-HE3-18
BAT54C-E3-08 or BAT54C-E3-18
BAT54C-HE3-08 or BAT54C-HE3-18
BAT54S-E3-08 or BAT54S-E3-18
BAT54S-HE3-08 or BAT54S-HE3-18
INTERNAL CONSTRUCTION
Single diode
Dual diodes common anode
Dual diodes common cathode
Dual diodes serial
TYPE MARKING
L4
L42
L43
L44
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Repetitive peak forward current
tp < 1 s
VRRM
IF
IFRM
IFSM
Ptot
Note
(1) Device on fiberglass substrate, see layout on next page
VALUE
30
200
300
600
230
UNIT
V
mA
mA
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Device on fiberglass substrate,
see layout on next page
RthJA
Junction temperature
Tj
Storage temperature range
Operating temperature range
Tstg
Top
VALUE
430
125
- 65 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
Rev. 1.9, 25-Feb-13
1 Document Number: 85508
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BAT54A 데이터시트, 핀배열, 회로
www.vishay.com
BAT54, BAT54A, BAT54C, BAT54S
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reserve recovery time
IR = 100 μA (pulsed)
Pulsed test tp < 300 μs, <2 % at
VR = 25 V
IF = 0.1 mA, tp < 300 μs, < 2 %
IF = 1 mA, tp < 300 μs, < 2 %
IF = 10 mA, tp < 300 μs, < 2 %
IF = 30 mA, tp < 300 μs, < 2 %
IF = 100 mA, tp < 300 μs, < 2 %
VR = 1 V, f = 1 MHz
IF = 10 mA to IR = 10 mA,
iR = 1 mA, RL = 100
V(BR)
IR
VF
VF
VF
VF
VF
CD
trr
30
LAYOUT FOR RthJA TEST
Thickness:
Fiberglas 15 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
TYP.
MAX.
2
240
320
400
500
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tj = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
18867
0.2 0.4 0.6 0.8 1 1.2 1.4
VF - Forward Voltage (V)
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
14
12
10
8
6
4
2
0
0
18868
4 8 12 16 20 24 28
VR - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage VR
Rev. 1.9, 25-Feb-13
2 Document Number: 85508
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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BAT54A diode

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