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STMicroelectronics |
® BAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
IF
IFRM
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Repetitive Peak Forward Current*
Ta = 70 °C
tp = 1s
δ ≤ 0.5
IFSM Surge non Repetitive Forward Current*
tp ≤ 10ms
Tstg Storage and Junction Temperature Range
Tj
TL Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient*
Test Conditions
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR * *
VF * *
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Test Conditions
VR = 80V
IF = 10mA
IF = 100mA
IF = 1A
DYNAMIC CHARACTERISTICS
Symbol
C
Tj = 25°C
Test Conditions
f = 1MHz
* On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed : 1A
VR = 0V
VR = 5V
DO 41
(Glass)
Value
80
500
3
10
- 65 to 150
- 65 to 125
230
Unit
V
mA
A
A
°C
°C
°C
Value
110
Unit
°C/W
Min.
Typ.
Max.
200
0.32
0.42
1
Unit
µA
V
Min.
Typ.
120
35
Max.
Unit
pF
1/4
BAT 49
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus VRRM in per
cent.
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