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STMicroelectronics |
BAT46J / BAT46W
® BAT46AW /BAT46CW / BAT46SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
High voltage schottky rectifier suited for SLIC pro-
tection during the card insertion operation.
K
K
NC
A
BAT46W
A
K1
A
K1 A
K2
K2
BAT46AW
A1
K
A1 K
A2
A2
BAT46CW
K1
A1
K2 A1
K1 K2
A2 A2
BAT46SW
SOT-323
A 46 K
BAT46J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF Continuous forward current
Ptot Power dissipation (note 1)
Tamb = 25°C
SOD-323
SOT-323
Tstg Maximum storage temperature range
Tj Maximum operating junction temperature *
TL Maximum temperaturefor soldering during 10s
Note 1: for double diodes, Ptot is the total dissipation of the both diodes.
Value
100
150
230
Unit
V
mA
mW
- 65 to +150
150
260
°C
°C
°C
*
:
dPtot
dTj
<
1
Rth(j−a)
thermal runaway condition for a diode on its own heatsink
June 1999 - Ed: 2A
1/5
BAT46J / BAT46W / BAT46AW / BAT46CW / BAT46SW
THERMAL RESISTANCE
Symbol
Parameters
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board, with recommended pad layout.
SOD-323
SOT-323
Value
550
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Test conditions
VBR Tj = 25 °C
VF * Tj = 25 °C
Tj = 25 °C
Tj = 25 °C
IR** Tj = 25 °C
Tj = 60 °C
IR = 100 µA
IF = 0.1 mA
IF = 10 mA
IF = 250 mA
VR = 1.5 V
Tj = 25 °C
Tj = 60 °C
VR = 10 V
Tj = 25 °C
Tj = 60 °C
VR = 50 V
Tj = 25 °C
Tj = 60 °C
VR = 75 V
Pulse test : * tp = 380µs δ < 2%
** tp = 5ms, δ < 2%
Min.
100
Typ.
Max.
0.25
0.45
1
0.5
5
0.8
7.5
2
15
5
20
Unit
V
V
µA
DYNAMIC CHARACTERISTICS
Symbol
C
Tj = 25 °C
Tj = 25 °C
Test conditions
VR = 0 V
VR = 1 V
F = 1MHz
Min.
Typ.
10
6
Max.
Unit
pF
2/5
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