파트넘버.co.kr BAT46 데이터시트 PDF


BAT46 반도체 회로 부품 판매점

Schottky Diodes



General Semiconductor 로고
General Semiconductor
BAT46 데이터시트, 핀배열, 회로
DO-35
max. .079 (2.0)
Cathode
Mark
max. .020 (0.52)
BAT46
Schottky Diodes
FEATURES
For general purpose apllications.
These diodes feature very low turn-
on voltage and fast switching. These
devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges.
This diode is also available in the SOD-123 case
with type designation BAT46W and in the MiniMELF
case with type designations LL46.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Repetitive Peak Reverse Voltage
VRRM
100
Forward Continuous Current at Tamb = 25 °C
IF 1501)
Repetitive Peak Forward Current
at tp < 1 s, δ < 0.5, Tamb = 25 °C
IFRM
3501)
Surge Forward Current at tp < 10 ms, Tamb = 25 °C
IFSM
7501)
Power Dissipation1) at Tamb = 65 °C
Ptot 1501)
Junction Temperature
Tj 125
Ambient Operating Temperature Range
Tamb
–65 to +125
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Unit
V
mA
mA
mA
mW
°C
°C
°C
4/98


BAT46 데이터시트, 핀배열, 회로
BAT46
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 100 µA Pulses
V(BR)R
100
V
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 10 mA
at IF = 250 mA
VF – – 0.25 V
VF – – 0.45 V
VF – – 1 V
Leakage Current
Pulse Test tp < 300 µs, δ < 2%
at VR = 1.5 V
at VR = 1.5 V, Tj = 60 °C
at VR = 10 V
at VR = 10 V, Tj = 60 °C
at VR = 50 V
at VR = 50 V, Tj = 60 °C
at VR = 75 V
at VR = 75 V, Tj = 60 °C
IR – – 0.5 µA
IR – – 5 µA
IR – – 0.8 µA
IR – – 7.5 µA
IR – – 2 µA
IR – – 15 µA
IR – – 5 µA
IR – – 20 µA
Capacitance
at VR = 0 V, f = 1 MHz
at VR = 1 V, f = 1 MHz
Ctot
Ctot
10 –
6–
pF
pF
Thermal Resistance Junction to Ambient Air
RthJA
0.31)
K/mW
1) Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: General Semiconductor

( gs )

BAT46 diode

데이터시트 다운로드
:

[ BAT46.PDF ]

[ BAT46 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BAT400

0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated



BAT400D

0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated



BAT400D-7

0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated



BAT40V

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS - Diodes Incorporated



BAT40VC

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS - Diodes Incorporated



BAT41

SMALL SIGNAL SCHOTTKY DIODE - STMicroelectronics



BAT41

Schottky Diodes - General Semiconductor



BAT41

Small Signal Schottky Diode - Vishay Siliconix



BAT41HT1G

Schottky Barrier Diodes - ON Semiconductor