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STMicroelectronics |
BAT 42
® BAT 43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessivevoltage such as electrostaticdischarges.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
IFRM
IF SM
Ptot
Tstg
Tj
TL
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordware Current
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
Ta = 25 °C
tp ≤ 1s
δ ≤ 0.5
tp = 10ms
Tl = 65 °C
Maximum Temperature for Soldering during 10s at 4mm from Case
Value
30
200
500
4
200
- 65 to +150
- 65 to +125
230
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient*
Test Conditions
* On infinite heatsink with 4mm lead length
Value
300
Unit
V
mA
mA
A
mW
°C
°C
°C
Unit
°C/W
August 1999 Ed: 1A
1/4
BAT 42/BAT 43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
VBR
VF*
IR*
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 100°C
Test Conditions
IR = 100µA
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
All Types
BAT 42
BAT 43
VR = 25V
Min.
30
0.26
Typ.
Max.
1
0.4
0.65
0.33
0.45
0.5
100
Unit
V
V
µA
DYNAMIC CHARACTERISTICS
Symbol
C
trr
h
Test Conditions
Tj = 25°C VR = 1V f = 1MHz
Tj = 25°C IF = 10mA IR = 10mA irr = 1mA RL = 100Ω
Tj = 25°C RL = 15KΩ CL = 300pF f = 45MHz Vi = 2V
* Pulse test: tp ≤ 300µs δ < 2%.
Min.
80
Typ.
7
Max.
5
Unit
pF
ns
%
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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