|
Siemens Semiconductor Group |
Silicon RF Switching Diode
q Low-loss VHF/UHF switch above 10 MHz
q Pin diode with low forward resistance
BAT 18
BAT 18 …
Type
BAT 18
BAT 18-04
Marking
A2
AU
Ordering Code Pin Configuration
Q62702-A787
Package1)
SOT 23
Q62702-A938
BAT 18-05
AS
Q62702-A940
BAT 18-06
AT
Q62702-A942
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Operating and
storage temperature range
Thermal Resistance
Junction - ambient
Symbol
VR
IF
Top
Tstg
Values
Unit
35 V
100 mA
– 55 … + 150 ˚C
Rth JA
≤ 450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BAT 18...
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Forward voltage
IF = 100 mA
Reverse current
VR = 20 V
VR = 20 V, TA = 60 ˚C
Diode capacitance
VR = 20 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance
VF
IR
CT
rf
LS
min.
–
–
–
–
–
–
Values
typ. max.
0.38
1.2
–
–
0.75
0.4
2
20
200
1
0.7
–
Unit
V
nA
pF
Ω
nH
Diode capacitance CT = f (VR)
f = 1 MHz
Forward resistance rf = f (IF)
f = 100 MHz
Semiconductor Group
2
|