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BAT165 반도체 회로 부품 판매점

Silicon Schottky Diode



Infineon Technologies AG 로고
Infineon Technologies AG
BAT165 데이터시트, 핀배열, 회로
Silicon Schottky Diode
 Medium current Schottky rectifier diode
 For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
 Miniature plastic package for surface
mounting (SMD)
BAT165...
BAT165
12
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT165
Package
SOD323
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Surge forward current, (t  10ms)
Average forward current (50/60Hz, sinus)
Total power dissipation
TS  66°C
Junction temperature
Storage temperature
VR
IF
IFSM
IFAV
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
40
750
2.5
500
600
150
-65 ... 150
Value
 140
Marking
C/White
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1 Nov-07-2002


BAT165 데이터시트, 핀배열, 회로
BAT165...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
IR
VR = 30 V
- - 50
VR = 30 V, TA = 65 °C
- - 900
Forward voltage
IF = 10 mA
IF = 100 mA
VF
- 0.305 0.4
- 0.38 -
IF = 250 mA
- 0.44 0.7
IF = 750 mA
- 0.58 -
AC Characteristics
Diode capacitance
VR = 10 V, f = 1 MHz
CT - 8.4 12
Unit
µA
V
pF
2 Nov-07-2002




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BAT165 diode

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