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Siemens Semiconductor Group |
Silicon Schottky Diodes
q Beam lead technology
q Low dimension
q High performance
q Low barrier
BAT 15- … D
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 15-020 D
BAT 15-050 D
BAT 15-090 D
BAT 15-110 D
Marking
–
Ordering Code
Q62702-D1263
Q62702-D3450
Q62702-D1280
Q62702-D1289
Pin Configuration
Package1)
D
Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Operating temperature range
Symbol
VR
IF
Tj
Tstg
Top
Values
BAT 15-020 D BAT 15-090 D
BAT 15-050 D BAT 15-110 D
44
100 50
175
– 65 … + 150
– 65 … + 150
Unit
V
mA
˚C
1) For detailed information see chapter Package Outlines.
BBAATT 1155-- …... D
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
IR = 10 µA
Diode capacitance
VR = 0, f = 1 MHz
BAT 15-020 D
BAT 15-050 D
BAT 15-090 D
BAT 15-110 D
Forward voltage
IF = 1 mA
IF = 10 mA
BAT 15-020 D
BAT 15-050 D
BAT 15-090 D
BAT 15-110 D
BAT 15-020 D
BAT 15-050 D
BAT 15-090 D
BAT 15-110 D
Single sideband noise figure
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz
BAT 15-020 D
f = 6.0 GHz
BAT 15-050 D
f = 9.3 GHz
BAT 15-090 D
f = 16 GHz
BAT 15-110 D
Differential forward resistance
IF = 10 mA
IF = 50 mA
BAT 15-020 D
BAT 15-050 D
BAT 15-090 D
BAT 15-110 D
V(BR)
CT
VF
FSSB
rf
4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
––V
pF
0.30 0.35
0.20 0.25
0.14 0.15
0.10 0.12
0.26 –
0.28 –
0.30 –
0.31 –
0.35 –
0.39 –
0.44 –
0.45 –
V
dB
6.0 –
6.5 –
6.5 –
7.0 –
3.5 –
4.0 –
7.0 –
10.0 –
Ω
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