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Siemens Semiconductor Group |
Silicon Schottky Diodes
q Beam lead technology
q Low dimension
q High performance
q Low barrier
BAT 15- … R
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 15-020 R
BAT 15-050 R
BAT 15-090 R
BAT 15-110 R
Marking
–
Ordering Code
Q62702-D1264
Q62702-D1272
Q62702-D1281
Q62702-D1290
Pin Configuration
Package1)
R
Maximum Ratings
Parameter
Forward current
Junction temperature
Storage temperature range
Operating temperature range
Symbol
IF
Tj
Tstg
Top
Values
BAT 15-020 R BAT 15-090 R
BAT 15-050 R BAT 15-110 R
100 50
175
– 65 … + 150
– 65 … + 150
Unit
mA
˚C
1) For detailed information see chapter Package Outlines.
BBAATT 1155-- …... R
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Diode capacitance
VR = 0, f = 1 MHz
BAT 15-020 R
BAT 15-050 R
BAT 15-090 R
BAT 15-110 R
Forward voltage
IF = 1 mA
IF = 10 mA
BAT 15-020 R
BAT 15-050 R
BAT 15-090 R
BAT 15-110 R
BAT 15-020 R
BAT 15-050 R
BAT 15-090 R
BAT 15-110 R
Single sideband noise figure
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz
BAT 15-020 R
f = 6.0 GHz
BAT 15-050 R
f = 9.3 GHz
BAT 15-090 R
f = 16 GHz
BAT 15-110 R
Differential forward resistance
IF = 10 mA
IF = 50 mA
BAT 15-020 R
BAT 15-050 R
BAT 15-090 R
BAT 15-110 R
CT
VF
FSSB
rf
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
0.30 0.35
0.20 0.25
0.14 0.15
0.10 0.12
0.26 –
0.28 –
0.30 –
0.31 –
0.35 –
0.39 –
0.44 –
0.45 –
V
dB
6.0 –
6.5 –
6.5 –
7.0 –
3.5 –
4.0 –
7.0 –
10.0 –
Ω
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