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Siemens Semiconductor Group |
Silicon Dual Schottky Diode
q DBS mixer application to 12 GHz
q Low noise figure
q Medium barrier type
BAT 14-099
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 14-099
Marking Ordering Code
(tape and reel)
S9 Q62702-A3461
Pin Configuration
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Power dissipation, TS ≤ 55 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance
Junction – ambient2)
Junction – soldering point
Symbol
VR
IF
Ptot
Tstg
Top
Values
Unit
4V
90 mA
100 mW
– 55 … + 150 ˚C
– 55 … + 150
Rth JA
Rth JS
≤ 1090
≤ 930
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
BAT 14-099
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Breakdown voltage
IR = 5 µA
Forward voltage
IF = 1 mA
IF = 10 mA
Forward voltage matching
IF = 10 mA
Diode capacitance
VR = 0, f= 1 MHz
Forward resistance
IF = 10 mA / 50 mA
VBR
VF
∆VF
CT
RF
min.
4
Values
typ. max.
––
Unit
V
–
0.43
–
–
0.55
–
– – 10 mV
– – 0.35 pF
– 5.5 – Ω
Semiconductor Group
2
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