|
Siemens Semiconductor Group |
Silicon Schottky Diodes
q Beam lead technology
q Low dimension
q High performance
q Medium barrier
BBAATT1144- -…...S
BAT 14- … S
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
Marking
–
Ordering Code
Q62702-D1258
Q62702-D1267
Q62702-D1275
Q62702-D1284
Pin Configuration
Pointed cathode
Package1)
S
Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Operating temperature range
Symbol
VR
IF
Tj
Tstg
Top
Values
BAT 14-020 S BAT 14-090 S
BAT 14-050 S BAT 14-110 S
44
100 50
175
– 65 … + 150
– 65 … + 150
Unit
V
mA
˚C
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
BBAATT1144- -…...S
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
IR = 10 µA
Diode capacitance
VR = 0, f = 1 MHz
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
Forward voltage
IF = 1 mA
IF = 10 mA
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
Single sideband noise figure
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz
BAT 14-020 S
f = 6.0 GHz
BAT 14-050 S
f = 9.3 GHz
BAT 14-090 S
f = 16 GHz
BAT 14-110 S
Differential forward resistance
IF = 10 mA
IF = 50 mA
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
V(BR)
CT
VF
FSSB
rf
4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.30
0.20
0.14
0.10
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
–
0.35
0.25
0.15
0.12
–
–
–
–
–
–
–
–
V
pF
V
dB
6.0 –
6.5 –
6.5 –
7.0 –
3.5 –
4.0 –
7.0 –
10.0 –
Ω
Semiconductor Group
2
|