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Infineon Technologies AG |
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
BAT14...
BAT14-03W
12
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT14-03W
Package
SOD323
Configuration
single
LS(nH) Marking
1.8 O/white
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 85 °C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Value
4
90
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
690
Unit
K/W
1 Feb-03-2003
BAT14...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Forward voltage
IF = 1 mA
IF = 10 mA
V(BR)
VF
4 - -V
0.36 0.43 0.52
0.48 0.55 0.66
AC Characteristics
Diode capacitance
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 10mA / 50mA
CT - 0.22 0.35 pF
RF - 5.5 -
2 Feb-03-2003
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