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STMicroelectronics |
BAS70J / BAS70W
® BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARD VOLTAGE DROP
n SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
NC
KK
NC
AA
BAS70W
K2
A
K2 A
K1
K1
BAS70-06W
A2
K
A2 K
A1
A1
BAS70-05W
K2
A2
K1 A2
K2 K1
A1 A1
BAS70-04W
SOT-323
A 76 K
BAS70J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
IF
IFSM
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
tp = 10 ms
Ptot Power dissipation (note 1)
Tamb = 25°C
SOD-323
SOT-323
Tstg Maximum storage temperature range
Tj Maximum operating junction temperature *
TL Maximum temperature for soldering during 10s
Note 1: for double diodes, Ptot is the total dissipation of both diodes.
Value
70
70
1
230
- 65 to +150
150
260
Unit
V
mA
A
mW
°C
°C
°C
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a)
May 2000 - Ed: 4B
1/5
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol
Parameters
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board, with recommended pad layout.
SOD-323
SOT-323
Value
550
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Test Conditions
VBR Tj = 25°C
IR = 10µA
VF * Tj = 25°C
IF = 1mA
IR ** Tj = 25°C
VR = 50V
Pulse test: * tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
Min. Typ. Max. Unit
70 V
410 mV
100 nA
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C Tj = 25°C
F = 1MHz
VR = 0V
τ* Tj = 25°C
IF = 5mA
Krakauer Method
* Effective carrier life time.
Min.
Typ.
Max.
2
Unit
pF
100 ps
2/5
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