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Infineon Technologies AG |
Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
BAS70... / BAS170W
BAS170W
BAS70-02L
BAS70-02W
12
BAS70-06
BAS70-06W
3
D1 D2
12
Type
BAS170W
BAS70
BAS70-02L*
BAS70-02W
BAS70-04
BAS70-04S
BAS70-04T
BAS70-04W
BAS70-05
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07W
* Preliminary
BAS70
BAS70-04
BAS70-04T
BAS70-04W
BAS70-04S
3
12
BAS70-07
BAS70-07W
3
D1 D2
12
65
4
D1 D2
D3 D4
12 3
4
D1
3
D2
12
Package
SOD323
SOT23
TSLP-2-1
SCD80
SOT23
SOT363
SC75
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
Configuration
single
single
single, leadless
single
series
dual series
series
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
BAS70-05
BAS70-05W
3
D1 D2
12
LS(nH) Marking
1.8 7
1.8 73s
0.4 F
0.6 73
1.8 74s
1.6 74s
1.6 74s
1.4 74s
1.8 75s
1.4 75s
1.8 76s
1.4 76s
2 77s
1.8 77s
1 Feb-03-2003
BAS70... / BAS170W
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Surge forward current
t 10ms
VR
IF
IFSM
Total power dissipation
BAS70, BAS70-07, TS 72 °C
BAS70-02L, TS 117 °C
BAS70-02W, TS 107 °C
BAS70-04, BAS70-06, TS 48 °C
BAS70-04S/W/-06W, BAS170W, TS 97 °C
BAS70-04T, TS 91 °C
BAS70-05, TS 22 °C
BAS70-05W, TS 90 °C
BAS70-07W, TS 114 °C
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAS70, BAS70-07
BAS70-02L
BAS70-02W
BAS70-04, BAS70-06
BAS70-04S/W, BAS70-06W
BAS70-04T
BAS70-05
BAS70-05W
BAS70-07W
BAS170W
Symbol
RthJS
Value
70
70
100
250
250
250
250
250
250
250
250
250
150
-55 ... 125
-55 ... 150
Value
310
130
170
410
210
235
510
240
145
190
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Feb-03-2003
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