파트넘버.co.kr BAS70-06 데이터시트 PDF


BAS70-06 반도체 회로 부품 판매점

Surface mount Schottky-Barrier Single-/ Double-Diodes



Diotec Semiconductor 로고
Diotec Semiconductor
BAS70-06 데이터시트, 핀배열, 회로
BAS70 ...-04 ...-05 ...-06
Schottky-Diodes
Surface mount Schottky-Barrier Single-/ Double-Diodes
Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage
Version 2004-04-09
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Power dissipation
Verlustleistung
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
310 mW
40 V
SOT-23
(TO-236)
0.01 g
Dimensions / Maße in mm
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
per diode / pro Diode
Power dissipation – Verlustleistung
Max. average forward current (dc)
Dauergrenzstrom
Ptot
IFAV
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current tp # 1 s
Stoßstrom-Grenzwert
IFRM
IFSM
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
Grenzwerte (TA = 25/C)
BAS70-series
310 mW 1)
200 mA 1)
300 mA 1)
500 mA
70 V
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
Forward voltage - Durchlaßspannung 2)
Leakage current - Sperrstrom 2)
IF = 1 mA
IF = 15 mA
VR = 50 V
Kennwerte (Tj = 25/C)
VF < 410 mV
VF < 1000 mV
IR < 100 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
1


BAS70-06 데이터시트, 핀배열, 회로
Schottky-Diodes
BAS70 ...-04 ...-05 ...-06
Characteristics (Tj = 25/C)
Max. junction Capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time - Sperrverzug
IF = 10 mA über / through IR = 10 mA bis / to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Kennwerte (Tj = 25/C)
CT 2 pF
trr < 5 ns
RthA 400 K/W 3)
Outline – Gehäuse
3
12
3
12
3
12
3
12
Pinning – Anschlußbelegung
Single diode – Einzeldiode
1 = A 2 = n.c. 3 = K
Double diode, series connect.
Doppeldiode, Reihenschaltung
1 = A1 2 = K2 3 = K1 / A2
Double diode, common cathode
Doppeldiode, gemeins. Katode
1 = A1 2 = A2 3 = K1 / K2
Double diode, common anode
Doppeldiode, gemeins. Anode
1 = K1 2 = K2 3 = A1 / A2
Marking – Stempelung
BAS70 = 73
BAS70-04 = 74
BAS70-05 = 75
BAS70-06 = 76
3) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2




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BAS70-06 diode

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