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Siemens Semiconductor Group |
Silicon Schottky Diode
q General-purpose diodes for
high-speed switching
q Circuit protection
q Voltage clamping
q High-level detection and mixing
BAS 70W
Type
Ordering Code
(tape and reel)
BAS 70-04W Q62702-A1068
BAS 70-05W Q62702-A1069
BAS 70-06W Q62702-A1070
Pin Configuration Marking
123
A1 C2 C1/A2 74s
A1 A2 C1/C2 75s
C1 C2 A1/A2 76s
Package1)
SOT-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current, t ≤ 10 ms
Total power dissipation TS ≤ 91 °C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient1)
Junction-soldering point
Symbol
VR
IF
IFSM
Ptot
Top
Tstg
Values
70
70
100
250
– 55 … + 150
– 55 … + 150
Rth JA
Rth JS
≤ 455
≤ 235
Unit
V
mA
mA
mW
°C
°C
K/W
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.
Semiconductor Group
1
10.94
BAS 70W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
Reverse current
VR = 50 V
VR = 70 V
Diode capacitance
VR = 0 V, f = 1 MHz
Charge carrier life time
IF = 25 mA
Differential forward resistance
IF = 10 mA, f = 10 kHz
Series inductance
V(BR)
VF
IR
CT
τ
rf
LS
min.
70
300
600
750
–
–
–
–
–
–
Value
typ. max.
Unit
V
––
mV
375 410
705 750
880 1000
µA
– 0.1
– 10
1.5 2
pF
ps
– 100
34 –
Ω
2 – nH
Semiconductor Group
2
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