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Número de pieza | BAS40TW | |
Descripción | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS40TW (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! BAS40TW /DW-04
/DW-05 /DW-06 /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
• Low Forward Voltage Drop
• Fast Switching
• Ultra-Small Surface Mount Package
• PN Junction Guard Ring for Transient and ESD Protection
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 4 and 5)
C1 C2 C3
AC C2 A2
1
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: See Diagrams Below
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C1 A2 A2
A1 C2 C2
AC
1
C1
C2
Top View
A1 A2
A3
BAS40TW
A1
C1
AC
2
BAS40DW-04
A1 A1 C2
BAS40DW-05
C1 C1 A2
BAS40DW-06
A1
A2
AC
2
BAS40BRW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Value
40
28
200
600
Unit
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
RθJA
TJ
TSTG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
°C/W
°C
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
40
⎯
⎯
⎯
⎯
Max
⎯
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
IR = 10μA
IF = 1.0mA, tp < 300μs
IF = 40mA, tp < 300μs
VR = 30V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BAS40TW.PDF ] |
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