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BAS40BRW 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS



Diodes Incorporated 로고
Diodes Incorporated
BAS40BRW 데이터시트, 핀배열, 회로
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
C1 C2 C3
AC C2 A2
1
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C1 A2 A2
A1 C2 C2
AC
1
C1
C2
Top View
A1 A2
A3
BAS40TW
A1
C1
AC
2
BAS40DW-04
A1 A1 C2
BAS40DW-05
C1 C1 A2
BAS40DW-06
A1
A2
AC
2
BAS40BRW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Value
40
28
200
600
Unit
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
RθJA
TJ
TSTG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
°C/W
°C
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
40
Max
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
IR = 10μA
IF = 1.0mA, tp < 300μs
IF = 40mA, tp < 300μs
VR = 30V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated


BAS40BRW 데이터시트, 핀배열, 회로
1
0.1
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
3
2
1
0
0 10 20 30 40
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
10,000
1,000
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
100
10
1
0.1
0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
250
200
150
100
50
0
0 40 80 120 160 200
TA, AMBIENT TEMPERATURE (ºC)
Fig. 4 Power Derating Curve, Total Package
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
2 of 4
www.diodes.com
July 2008
© Diodes Incorporated




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