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Infineon Technologies AG |
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
BAS40.../BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
12
BAS40-07
BAS40-07W
3
12
3
D1 D2
12
3
D1 D2
12
3
D1 D2
12
4
D1
3
D2
12
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAS140W
BAS40
BAS40-02L*
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS40-07
BAS40-07W
Package
SOD323
SOT23
TSLP-2-1
SOT23
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
Configuration
single
single
single, leadless
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
LS(nH) Marking
1.8 white 4
1.8 43s
0.4 FF
1.8 44s
1.8 45s
1.4 45s
1.8 46s
1.4 46s
2 47s
1.8 47s
*Preliminary
1 Jan-16-2004
BAS40.../BAS140W
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
t ≤ 10ms
VR
IF
IFSM
Total power dissipation
BAS140W, TS ≤ 113°C
BAS40, BAS40-07, TS ≤ 81°C
BAS40-02L, TS ≤ 127°C
BAS40-04, BAS40-06, TS ≤ 56°C
BAS40-06W, TS ≤ 106°C
BAS40-05, TS ≤ 31°C
BAS40-05W, TS ≤ 98°C
BAS40-07W, TS ≤ 118°C
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAS140W
BAS40, BAS40-07
BAS40-02L
BAS40-04, BAS40-06
BAS40-06W
BAS40-05
BAS40-05W
BAS40-07W
Symbol
RthJS
Value
40
120
200
250
250
250
250
250
250
250
250
150
-55 ... 125
-55 ... 150
Value
≤ 150
≤ 275
≤ 90
≤ 375
≤ 175
≤ 475
≤ 205
≤ 125
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Jan-16-2004
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