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PDF BAS35 Data sheet ( Hoja de datos )
| Número de pieza | BAS35 | |
| Descripción | General purpose controlled avalanche double diodes | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
1 page  
Philips Semiconductors
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
Product specification
BAS29; BAS31; BAS35
handboo3k,0h0alfpage
IF
(mA)
200
(1)
MBG440
600
handbook, halfpage
IF
(mA)
400
(1) (2) (3)
MBH280
100
(2)
200
0
0
100
Tamb (oC)
200
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
0
0 1 VF (V) 2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
102
handbook, full pagewidth
IFSM
(A)
10
MBH327
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 21
5
5 Page 
Philips Semiconductors
General purpose controlled avalanche
(double) diodes
NOTES
Product specification
BAS29; BAS31; BAS35
1999 May 21
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BAS35.PDF ] | |
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