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BAS29 반도체 회로 부품 판매점

General purpose controlled avalanche double diodes



NXP Semiconductors 로고
NXP Semiconductors
BAS29 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 21


BAS29 데이터시트, 핀배열, 회로
Philips Semiconductors
General purpose controlled avalanche
(double) diodes
Product specification
BAS29; BAS31; BAS35
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 90 V
Repetitive peak reverse voltage:
max. 110 V
Repetitive peak forward current:
max. 600 mA
Repetitive peak reverse current:
max. 600 mA.
PINNING
PIN
BAS29
1 anode
2 not connected
3 cathode
DESCRIPTION
BAS31
BAS35
anode
cathode
common connection
cathode (k1)
cathode (k2)
common anode
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
TYPE NUMBER
MARKING
CODE
BAS29
L20
BAS31
L21
BAS35
L22
handbook, halfpa2ge
1
3
a. Simplified outline.
2
n.c.
3
b. BAS29 diode.
1
21
3
c. BAS31 diode.
21
3
d. BAS35 diode.
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
1999 May 21
2




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BAS29 diode

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