|
Infineon Technologies AG |
Silicon Switching Diode
• For high-speed switching applications
• High breakdown voltage
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAS21...
BAS21
!
BAS21-03W
BAS21U
$#
"
, ,
,!
!
Type
BAS21
BAS21-03W
BAS21U
Package
SOT23
SOD323
SC74
Configuration
single
single
parallel triple
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Peak forward current
Surge forward current, t = 10 µs
IFM
IFS
Non-repetitive peak surge forward current
IFSM
Total power dissipation
BAS21, TS ≤ 70°C
BAS21-03W, TS ≤ 124°C
BAS21U, TS ≤ 122°C
Ptot
Junction temperature
Tj
Storage temperature
Tstg
1Pb-containing package may be available upon special request
Marking
JSs
D
JSs
Value
200
250
250
625
625
4
-
350
250
250
150
-65 ... 150
Unit
V
mA
mA
A
mW
°C
1 2007-04-19
BAS21...
Thermal Resistance
Parameter
Junction - soldering point1)
BAS21
BAS21-03W
BAS21U
Symbol
RthJS
Value
≤ 230
≤ 105
≤ 110
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
250 -
-
Reverse current
VR = 200 V
VR = 200 V, TA = 150 °C
IR
- - 0.1
- - 100
Forward voltage
IF = 100 mA
IF = 200 mA
VF
--1
- - 1.25
Unit
V
µA
V
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 30 mA, IR = 30 mA, measured at IR = 3mA,
RL = 100 Ω
CT
trr
- - 5 pF
- - 50 ns
Test circuit for reverse recovery time
D.U.T.
Ι F Oscillograph
Puls generator: tp = 1µs, D = 0.05
tr = 0.6ns, Ri = 50Ω
Oscillograph: R = 50Ω , tr = 0.35ns, C ≤ 1pF
EHN00018
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2007-04-19
|