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BAS21 반도체 회로 부품 판매점

Surface Mount Switching Diode



Vishay Telefunken 로고
Vishay Telefunken
BAS21 데이터시트, 핀배열, 회로
www.vishay.com
BAS19, BAS20, BAS21
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
3
12
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BAS19
VR = 100 V
BAS20
VR = 150 V
BAS21
VR = 200 V
ORDERING CODE
BAS19-E3-08 or BAS19-E3-18
BAS19-HE3-08 or BAS19-HE3-18
BAS20-E3-08 or BAS20-E3-18
BAS20-HE3-08 or BAS20-HE3-18
BAS21-E3-08 or BAS21-E3-18
BAS21-HE3-08 or BAS21-HE3-18
TYPE
MARKING
A8
A81
A82
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous recerse voltage
Repetitive peak reverse voltage
Non repetitive peak forward
current
t = 1 μs
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
VR
VR
VR
VRRM
VRRM
VRRM
IFSM
Non repetitive peak forward
surge current
t=1s
IFSM
Maximum average forward
rectified current (1)
DC forward current (2)
Repetitive peak forward current
Power dissipation (2)
(av. over any 20 ms period)
IF(AV)
IF
IFRM
Ptot
Notes
(1) Measured under pulse conditions; pulse time = tp 0.3 ms
(2) Device on fiberglass substrate, see layout on next page
VALUE
100
150
200
120
200
250
2.5
0.5
200
200
625
250
UNIT
V
V
V
V
V
V
A
A
mA
mA
mA
mW
Rev. 1.8, 15-May-13
1 Document Number: 85540
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BAS21 데이터시트, 핀배열, 회로
www.vishay.com
BAS19, BAS20, BAS21
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
RthJA (1)
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Device on fiberglass substrate, see layout drawing below
VALUE
430
150
- 65 to + 150
- 55 to + 150
UNIT
°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
IF = 100 mA
IF = 200 mA
VF
VF
Leakage current
VR = 100 V
VR = 150 V
VR = 200 V
BAS19
BAS20
BAS21
IR
IR
IR
Dynamic forward resistance
Diode capacitance
Reverse recovery time
VR = VRmax., Tj = 150 °C
IF = 10 mA
VR = 0, f = 1 MHz
IF = IR = 30 mA, RL = 100 ,
iR = 3 mA
IR
rf
CD
trr
TYP.
5
MAX.
1.0
1.25
100
100
100
100
5
50
UNIT
V
V
nA
nA
nA
μA
pF
ns
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.8, 15-May-13
2 Document Number: 85540
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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