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General Semiconductor |
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NEW PRODUCT
BAS16D, BAS16WS
SMALL SIGNAL DIODES
.022 (0.55)
Cathode Mark
Top View
SOD-123
(BAS16D)
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ Fast switching diode.
♦ Also available in case SOT-23
with designation BAS16.
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
.012 (0.3)
Cathode Mark
Top View
SOD-323
(BAS16WS)
MECHANICAL DATA
BAS16D
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Marking Code: A6
BAS16WS
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: A6
.059 (1.5)
.043 (1.1)
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Reverse Voltage
Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1µs
at t = 1ms
at t = 1s
Power Dissipation at Tamb = 25 °C
Maxium Junction Temperature
Storage Temperature Range
BAS16D
BAS16WS
SYMBOL
VR
VRM
IF
IFSM
IFSM
IFSM
Ptot
Tj
TS
VALUE
75
100
250
2.0
1.0
0.5
3501)
2001)
150
– 65 to +1501)
1)Valid provided electrodes are kept at ambient temperture.
UNIT
V
V
mA
A
A
A
mW
mW
°C
°C
10/21/98
BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Leakage Current
at VR = 25 V, Tj = 150 °C
at VR = 75 V
at VR = 75 V, Tj = 150 °C
Capacitance
at VR = 0; f = 1 MHz
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA
IR = 1 mA, RL = 100Ω
Thermal Resistance
Junction to Ambient Air
BAS16D
BAS16WS
Symbol
VF
VF
VF
VF
IR
IR
IR
Ctot
trr
RthJA
Min.
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
–
1)Valid provided that electrodes are kept at ambient temperature
Max.
715
855
1.00
1.25
30
1
50
2
6
3751)
6501)
Unit
mV
mV
V
V
µA
µA
µA
pF
ns
°C/W
°C/W
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