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BAS16T 반도체 회로 부품 판매점

SURFACE MOUNT FAST SWITCHING DIODE



Diodes Incorporated 로고
Diodes Incorporated
BAS16T 데이터시트, 핀배열, 회로
Features
Ultra-Small Surface Mount Package
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
BAS16T, BAW56T,
BAV70T, BAV99T
SURFACE MOUNT FAST SWITCHING DIODE
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead-Free Plating); Solderable per MIL-STD-202, Method 208
Polarity: See Diagrams Below
Weight: 0.002 grams (Approximate)
SOT-523
TOP VIEW
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Ordering Information (Note 5)
Notes:
Part Number
Compliance
Case
Packaging
BAS16T-7-F
Standard
SOT-523
3,000/Tape & Reel
BAW56T-7-F
Standard
SOT-523
3,000/Tape & Reel
BAV70T-7-F
Standard
SOT-523
3,000/Tape & Reel
BAV99T-7-F
Standard
SOT-523
3,000/Tape & Reel
BAV99TQ-13-F
Automotive
SOT-523
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-523
Date Code Key
Year
Code
Month
Code
XXYM
XX = Product Type Marking Code (See this page, e.g. A2 = BAS16T)
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
…..
…..
Apr
4
2015
C
2016
D
2017
E
2018
F
May Jun
56
Jul Aug Sep
78 9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
BAS16T, BAW56T,
BAV70T, BAV99T
Document number: DS30260 Rev. 11 - 2
1 of 5
www.diodes.com
April 2015
© Diodes Incorporated


BAS16T 데이터시트, 핀배열, 회로
BAS16T, BAW56T,
BAV70T, BAV99T
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 6)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Single Diode
Double Diode
@ t = 1.0µs
@ t = 1.0ms
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Value
85
60
155
75
500
4.0
1.0
0.5
Unit
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
85
V IR = 100µA
0.715
IF = 1.0mA
Forward Voltage
VF
0.855
1.0
V IF = 10mA
IF = 50mA
1.25
IF = 150mA
2.0 A VR = 75V
Leakage Current (Note 7)
IR
100
60
A VR = 75V, TJ = +150°C
A VR = 25V, TJ = +150°C
30 nA VR = 25V
Total Capacitance
CT 1.5 pF VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Notes: 6. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS16T, BAW56T,
BAV70T, BAV99T
Document number: DS30260 Rev. 11 - 2
2 of 5
www.diodes.com
April 2015
© Diodes Incorporated




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BAS16T diode

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