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Infineon Technologies AG |
Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAS16...
BAS16
BAS16W
!
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
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"
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!
BAS16-07L4
"
,
!
,
Type
BAS16
BAS16-02L*
BAS16-02V
BAS16-02W
BAS16-03W
BAS16-07L4*
BAS16S
BAS16U
BAS16W
* Preliminary Data
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
TSLP-4-4
SOT363
SC74
SOT323
Configuration
single
single, leadless
single
single
single
parallel pair, leadless
parallel triple
parallel triple
single
1Pb-containing package may be available upon special request
Marking
A6s
A6
6
A6
white B
6A
A6s
A6s
A6s
1 2009-09-28
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
BAS16
VR
VRM
IF
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current
t = 1 µs, BAS16/ S/ U/ W/ -03W
t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4
t=1s
Total power dissipation
BAS16, TS ≤ 54 °C
BAS16-02L, -07L4, TS ≤ 130 °C
BAS16-02V, -02W, TS ≤ 120 °C
BAS16-03W, TS ≤ 116 °C
BAS16S, TS ≤ 85 °C
BAS16U, TS ≤ 113 °C
BAS16W, TS ≤ 119 °C
Junction temperature
Storage temperature
IFSM
Ptot
Tj
Tstg
BAS16...
Value
80
85
250
200
200
250
200
200
250
4.5
2.5
0.5
370
250
250
250
250
250
250
150
-65 ...150
Unit
V
mA
A
mW
°C
2 2009-09-28
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