파트넘버.co.kr BAS16LT1 데이터시트 PDF


BAS16LT1 반도체 회로 부품 판매점

Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAS16LT1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BAS16LT1
Preferred Device
Switching Diode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR 75 Vdc
Peak Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
°C
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
3 DIAGRAM
1
2
SOT−23
CASE 318
STYLE 8
A6 M
G
1
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BAS16LT1
SOT−23 3000/Tape & Reel
BAS16LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
BAS16LT3
SOT−23 10000/Tape & Reel
BAS16LT3G
SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
BAS16LT1/D


BAS16LT1 데이터시트, 핀배열, 회로
BAS16LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Min
75
Max
1.0
50
30
715
855
1000
1250
2.0
1.75
6.0
45
Unit
mAdc
Vdc
mV
pF
Vdc
ns
pC
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2




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