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Número de pieza | BAS16-7 | |
Descripción | SURFACE MOUNT SWITCHING DIODE | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS16-7 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! BAS16/MMBD4148/MMBD914
SURFACE MOUNT SWITCHING DIODE
Features
· Fast Switching Speed
· Surface Mount Package Ideally Suited for
Automatic Insertion
· For General Purpose Switching Applications
· High Conductance
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Marking: KA6, KA2, K5D (See Page 3)
· Weight: 0.008 grams (approx.)
A
TOP VIEW
ED
G
H
D
BC
K
J
L
M
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
RqJA
Tj , TSTG
Value
100
75
53
300
200
2.0
1.0
350
357
-65 to +150
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.85 0.80
a 0° 8°
All Dimensions in mm
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
V(BR)R
Min
75
Forward Voltage (Note 2)
VFM
¾
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
IRM ¾
CT ¾
trr ¾
Max
¾
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR = 100mA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes: 1. Device mounted on glass epoxy PCB 1.6” x 1.6” x0.06”; mounting pad for the cathode lead min. 0.93in2.
2. Short duration test pulse used to minimize self-heating effect.
DS12003 Rev. 12 - 2
1 of 3
BAS16/MMBD4148/MMBD914
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BAS16-7.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS16-02 | Silicon Switching Diode | Infineon Technologies AG |
BAS16-02L | Silicon Switching Diode | Infineon Technologies AG |
BAS16-02V | Silicon Switching Diode | Infineon Technologies AG |
BAS16-02W | Silicon Switching Diode Preliminary data (For high-speed switching applications) | Siemens Semiconductor Group |
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