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BAS16-03W 반도체 회로 부품 판매점

Silicon Switching Diode Preliminary data (For high-speed switching applications)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BAS16-03W 데이터시트, 핀배열, 회로
Silicon Switching Diode
Preliminary data
For high-speed switching applications
BAS 16-03W
2
1 VPS05176
Type
BAS 16-03W
Marking
B
Ordering Code
Q62702-A1231
Pin Configuration
1=A
2=C
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 111 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
RthJA
RthJS
Value
75
85
250
4.5
250
150
- 65 ...+150
Unit
V
mA
A
mW
°C
235
155
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Mar1-19938--11919-081


BAS16-03W 데이터시트, 핀배열, 회로
BAS 16-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
V(BR)
VF
75 -
-V
mV
- - 715
- - 855
- - 1000
- - 1250
Reverse current
VR = 70 V
Reverse current
VR = 25 V, TA = 150 °C
VR = 75 V, TA = 150 °C
IR - - 1 µA
IR
- - 30
- - 50
Forward recovery voltage
IF = 10 mA, tp = 20 ns
Vfr - - 1.75 V
AC characteristics
Diode capacitance
VR = 0 V, f = 20 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 ,
measured at IR = 1mA
CD - - 2 pF
trr - - 6 ns
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00017
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
SSeemmicioconndduuctcotor rGGrorouupp
22
Mar1-19938--11919-081




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제조업체: Siemens Semiconductor Group

( siemens )

BAS16-03W diode

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