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BAS16 반도체 회로 부품 판매점

Small Signal Diodes



General Semiconductor 로고
General Semiconductor
BAS16 데이터시트, 핀배열, 회로
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
BAS16
Small Signal Diodes
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode in case SOT-23,
especially suited for automatic inser-
tion.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
A6
3
12
Top View
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Reverse Voltage
Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout (SOT-23).
Symbol
VR
VRM
IF
IFSM
IFSM
IFSM
Ptot
Tj
TS
Value
75
100
250
2
1
0.5
3501)
150
–65 to +1501)
Unit
V
V
mA
A
A
A
mW
°C
°C
4/98


BAS16 데이터시트, 핀배열, 회로
BAS16
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Leakage Current
at VR = 25 V, Tj = 150 °C
at VR = 75 V
at VR = 75 V, Tj = 150 °C
VF
VF
VF
VF
IR
IR
IR
Capacitance
at VR = 0; f = 1 MHz
Ctot
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA
IR = 1 mA, RL = 100
Thermal Resistance
Junction to Ambient Air
trr
BAS16 RthJA
1) Device on fiberglass substrate, see layout (SOT-23).
Min.
Typ.
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Max.
715
855
1000
1250
30
1
50
2
6
Unit
mV
mV
mV
mV
µA
µA
µA
pF
ns
4301)
K/W
K/W




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BAS16 diode

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