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Siemens Semiconductor Group |
Silicon Schottky Diode
q General purpose diodes for high-speed switching
q Circuit protection
q Voltage clamping
q High-level detecting and mixing
BAS 140W
Type
BAS 140W
Ordering Code
(tape and reel)
Q62702-A1071
Pin Configuration
12
AC
Marking
4
Package
SOD-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current, t ≤ 10 ms
Total power dissipation TS ≤ 113 °C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient1)
Junction-soldering point
Symbol
VR
IF
IFSM
Ptot
Top
Tstg
Rth JA
Rth JS
Values
40
120
200
250
– 55 … + 125
– 55 … + 150
≤ 260
≤ 150
Unit
V
mA
mA
mW
°C
°C
K/W
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.
Semiconductor Group
1
05.95
BAS 140W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
Reverse current
VR = 30 V
VR = 40 V
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 10 mA, f = 10 kHz
Series inductance
V(BR)
VF
IR
CT
RF
LS
min.
40
250
350
600
–
–
–
–
–
Value
typ. max.
Unit
V
––
mV
310 380
450 500
720 1000
µA
–1
– 10
pF
35
10 –
Ω
2 – nH
Semiconductor Group
2
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