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BAS140 반도체 회로 부품 판매점

Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BAS140 데이터시트, 핀배열, 회로
Silicon Schottky Diode
q General purpose diodes for high-speed switching
q Circuit protection
q Voltage clamping
q High-level detecting and mixing
BAS 140W
Type
BAS 140W
Ordering Code
(tape and reel)
Q62702-A1071
Pin Configuration
12
AC
Marking
4
Package
SOD-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current, t 10 ms
Total power dissipation TS 113 °C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient1)
Junction-soldering point
Symbol
VR
IF
IFSM
Ptot
Top
Tstg
Rth JA
Rth JS
Values
40
120
200
250
– 55 … + 125
– 55 … + 150
260
150
Unit
V
mA
mA
mW
°C
°C
K/W
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.
Semiconductor Group
1
05.95


BAS140 데이터시트, 핀배열, 회로
BAS 140W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
Reverse current
VR = 30 V
VR = 40 V
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 10 mA, f = 10 kHz
Series inductance
V(BR)
VF
IR
CT
RF
LS
min.
40
250
350
600
Value
typ. max.
Unit
V
––
mV
310 380
450 500
720 1000
µA
–1
– 10
pF
35
10 –
2 – nH
Semiconductor Group
2




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BAS140 diode

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