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Siemens Semiconductor Group |
Silicon Schottky Diode
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
BAS 125-07W
3
4
2
1 VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BAS 125-07W 17s
Q62702-D1347 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t< 100µs)
Total power dissipation, TS = 25 °C
Junction temperature
Storage temperature
Symbol
VR
IF
IFSM
Ptot
Tj
Tstg
Value
25
100
500
250
150
- 55 ...+150
Unit
V
mA
mW
°C
Maximum Ratings
Junction - ambient 1)
Junction - soldering point
RthJA
RthJS
≤ 725
≤ 565
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
SSeemmicioconndduuctcotor rGGrorouupp
11
Jun1-90948--11919-081
BAS 125-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
VR = 25 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
IR µA
- - 150
- - 200
VF mV
- 385 400
- 530 650
- 800 900
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
CT - - 1.1 pF
rf - 16 - Ω
SSeemmicioconndduuctcotor rGGrorouupp
22
Jun1-90948--11919-081
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