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BAR81 반도체 회로 부품 판매점

Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BAR81 데이터시트, 핀배열, 회로
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81
Type
BAR 81
Marking Ordering Code
BBs Q62702-A1145
Pin Configuration
Package
1 = C 2 = A 3 = C 4 = A MW-4
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
30
100
- 55 ... + 125
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Feb-26-1996


BAR81 데이터시트, 핀배열, 회로
BAR 81
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Reverse current
VR = 20 V, TA = 25 °C
Forward voltage
IF = 100 mA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
IR
-
VF
-
CT
-
-
rf
-
Ls -
-
0.93
0.6
0.57
0.7
0.15
max.
20
1
-
-
-
-
Unit
nA
V
pF
nH
Semiconductor Group
2
Feb-26-1996




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BAR81 diode

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