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Siemens Semiconductor Group |
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81
Type
BAR 81
Marking Ordering Code
BBs Q62702-A1145
Pin Configuration
Package
1 = C 2 = A 3 = C 4 = A MW-4
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
30
100
- 55 ... + 125
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Feb-26-1996
BAR 81
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Reverse current
VR = 20 V, TA = 25 °C
Forward voltage
IF = 100 mA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
IR
-
VF
-
CT
-
-
rf
-
Ls -
-
0.93
0.6
0.57
0.7
0.15
max.
20
1
-
-
-
-
Unit
nA
V
pF
Ω
nH
Semiconductor Group
2
Feb-26-1996
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