BAR80 반도체 회로 부품 판매점
Silicon RF Switching Diode
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 Infineon Technologies AG |
Silicon RF Switching Diode
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
BAR80
3
4
2
1
VSO05553
Type
BAR80
Marking
AAs
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Pin Configuration
1=C 2=A 3=C 4=A
Package
MW-4
Symbol
VR
IF
Tj
Top
Tstg
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 Aug-17-2001
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
IR - - 20 nA
VF
0.8 -
1V
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
CT pF
- 1 1.6
0.6 0.92 1.3
rf - 0.5 0.7
Ls - 0.14 - nH
Application information
Shunt signal isolation
IF = 10 mA, f = 2 GHz, RG=RL=50
Shunt insertion loss
VR = 5 V, f = 2 GHz, RG=RL=50
SI - 23 - dB
IL - 0.15 -
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
2 Aug-17-2001
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Infineon Technologies AG
( infineon )
BAR80 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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