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Infineon Technologies AG |
Silicon PIN Diodes
PIN diode for high speed
switching of RF signals
Very low forward resistance (low insertion loss)
Very low capacitance (high isolation)
For frequencies up to 3GHz
BAR63...
BAR63-02..
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4
3
1 2 D1 D2
12
3
D1 D2
12
3
D1 D2
12
4
D1
1
3
D2
2
Type
BAR63-02L*
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4*
* preliminary data
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
TSLP-4-4
Configuration
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair, leadless
LS(nH) Marking
0.4 G
0.6 G
0.6 GG
1.8 G
1.8 G4s
1.4 G4s
1.8 G5s
1.4 G5s
1.8 G6s
1.4 G6s
0.4 P3s
1 Jun-27-2003
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAR63-02L, TS 118°C
BAR63-02V, -02W, BAR63-03W, TS 115°C
BAR63-04...BAR63-06, TS 55°C
BAR63-04S, TS 115°C
BAR63-04W...BAR63-06W, TS 105°C
BAR63-07L4, TS tbd
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
BAR63-07L4
Symbol
RthJS
1For calculation of RthJA please refer to the Technical Information
BAR63...
Value
50
100
250
250
250
250
250
250
150
-55 ... 125
-55 ... 150
Value
125
140
155
380
180
180
tbd
Unit
V
mA
mW
°C
Unit
K/W
2 Jun-27-2003
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