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Siemens Semiconductor Group |
BAR 63-03W
Silicon PIN Diode
l PIN diode for high speed switching of RF signals
l Low forward resistance
l Very low capacitance
l For frequencies up to 3 GHz
Type
Marking
BAR 63-03W G
Ordering Code
(tape and reel)
Q62702-A1025
Pin Configuration Package 1)
12
A C SOD-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Total Power dissipation TS ≤ 111°C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient 1)
Junction-soldering point
Symbol
VR
IF
Ptot
Top
Tstg
Rth JA
Rth JS
BAR 63-03W
50
100
250
-55 +150°C
-55...+150°C
Unit
V
mA
mW
°C
°C
≤ 235
≤ 155
K/W
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 22.07.94
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC Characteristics
Breakdown voltage
IR = 5 µA
Reverse leakage
VR = 20 V
Forward voltage
IF = 100 mA
Diode capacitance
VR = 0 V, f = 100 MHz
Diode capacitance
VR = 5 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
BAR 63-03W
Symbol
min.
Value
Unit
typ. max.
V(BR)
IR
VF
CT
CT
rf
τL
Ls
50 -
--
V
-
nA
50
V
- 0.95 1.2
pF
- 0.3 -
pF
- 0.21 0.3
Ω
- 1.2 2
- 1-
ns
- 75 -
nH
- 2.0 -
Semiconductor Group 2 Edition A01, 22.07.94
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