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Siemens Semiconductor Group |
BAR 63...
Silicon PIN Diode
l PIN diode for high speed switching of RF signals
l Low forward resistance
l Very low capacitance
l For frequencies up to 3 GHz
Type
BAR 63
BAR 63-04
BAR 63-05
BAR 63-06
Marking
G3
G4
G5
G6
Ordering code
(tape and reel)
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
Pin configuration Package 1)
1 23
A - C SOT-23
A C C/A
A A C/C
C C A/A
Maximum ratings
Parameter
Reverse voltage
Forward current
Total Power dissipation TS ≤ 80°C
BAR 63-04,-05,-06
TS ≤ 55°C
Operating temperature range
Storage temperature range
Thermal resistance
Junction-ambient 1)
BAR63
BAR 63-04,-05,-06
Junction-soldering point
BAR64
BAR63-04,-05,-06
Symbol
VR
IF
Ptot
Top
Tstg
Rth JA
Rth JS
BAR 63
50
100
250
250
-55 +150°C
-55...+150°C
Unit
V
mA
mW
°C
°C
≤ 450
≤ 540
≤ 280
≤ 380
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 23.02.95
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
IR = 5 µA
Reverse leakage
VR = 20 V
Forward voltage
IF = 100 mA
Diode capacitance
VR = 0 V, f = 100 MHz
Diode capacitance
VR = 5 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
Forward current IF = f (TA*TS)
BAR63
mA
BAR 63...
Symbol
min.
Value
Unit
typ. max.
V(BR)
IR
VF
CT
CT
rf
τs
Ls
50 -
--
-
50
- 0.95 1.2
- 0.3 -
- 0.21 0.3
- 1.2 2
- 1-
- 75 -
- 1.4 -
Forward current IF = f (TA*TS)
per each Diode BAR63-04,-05,-06
V
nA
V
pF
pF
Ω
ns
nH
mA
TS TS
IF TA IF TA
TS TA
Semiconductor Group
2
TS TA
Edition A01, 23.02.95
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