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Siemens Semiconductor Group |
Silicon PIN Diodes
q RF switch
q RF attenuator for frequencies above 10 MHz
BAR 60
BAR 61
Type
BAR 60
Marking
60
Ordering Code
(tape and reel)
Q62702-A786
Pin Configuration
Package1)
SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Total power dissipation, TS ≤ 65 ˚C2)
Junction temperature
Storage temperature range
Operating temperature range
Symbol
VR
IF
Ptot
Tj
Tstg
Top
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
Values
Unit
100 V
140 mA
250 mW
150 ˚C
– 55 … + 150
– 55 … + 150
≤ 580
≤ 340
K/W
07.94
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC/AC Characteristics
Reverse current
VR = 50 V
VR = 100 V
Forward voltage
IF = 100 mA
Diode capacitance
VR = 50 V, f = 1 MHz
VR = 0, f = 100 MHz
Zero bias conductance
VR = 0, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA
Differential forward resistance
f = 100 MHz, IF = 0.01 mA
IF = 0.1 mA
IF = 1.0 mA
IF = 10 mA
BAR 60
BAR 61
Symbol
Values
Unit
min. typ. max.
IR
– – 100 nA
– – 1 µA
VF – – 1.25 V
CT pF
– 0.25 0.5
– 0.2 –
gp – 50 – µS
τL – 1 – µs
rf Ω
– 2800 –
– 380 –
– 45 –
–7–
Semiconductor Group
2
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