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Infineon Technologies AG |
Silicon PIN Diode
• RF switch, RF attenuator for frequencies
above 10 MHz
• Low distortion faktor
• Long-term stability of electrical characteristics
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAR1.../BAR61...
BAR14-1
BAR15-1
BAR16-1
BAR61
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Type
BAR14-1
BAR15-1
BAR16-1
BAR61
Package
SOT23
SOT23
SOT23
SOT143
Configuration
series
common cathode
common anode
PI element
LS(nH)
1.8
1.8
1.8
2
Marking
L7s
L8s
L9s
61s
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS ≤ 65°C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Value
100
140
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
≤ 340
Unit
K/W
1 2007-04-19
BAR1.../BAR61...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 50 V
VR = 100 V
Forward voltage
IF = 100 mA
IR nA
- - 100
- - 1000
VF - 1.05 1.25 V
AC Characteristics
Diode capacitance
VR = 0 V, f = 100 MHz
VR = 50 V, f = 1 MHz
Zero bias conductance
VR = 0 V, f = 100 MHz
Forward resistance
IF = 0.01 mA, f = 100 MHz
IF = 0.1 mA, f = 100 MHz
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
CT pF
- 0.2 0.5
- 0.25 0.5
gP - 50 100 µS
rf Ω
- 2600 4200
300 470 -
35 55 85
5.5 8 12
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
I-region width
τ rr
WI
700 1000 - ns
- 146 - µm
2 2007-04-19
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