파트넘버.co.kr BAP65-02 데이터시트 PDF


BAP65-02 반도체 회로 부품 판매점

Silicon PIN diode



Leshan Radio Company 로고
Leshan Radio Company
BAP65-02 데이터시트, 핀배열, 회로
www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
· RF attenuators and switches
1
CATHODE
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
BAP65 – 02
2
ANODE
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL
VR
I IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s < 90°C
MIN.
-65
-65
MAX.
30
100
715
+150
+150
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
r D diode forward resistance
|s 21| 2
isolation
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
I F =50 mA
V R =20 V
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 3 V; f = 1 MHz
V R = 20 V; f = 1 MHz
I F = 1 mA; f = 100 MHz;
I F = 5 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz;
V R = 0; f = 900 MHz
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
I F = 1 mA; f = 900 MHz
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
I F = 5 mA; f = 900 MHz
I F = 5 mA; f = 1800 MHz
I F = 5 mA; f = 2450 MHz
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
I F = 100 mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
TYP.
0.9
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
MAX.
1.1
20
0.9
0.8
0.95
0.9
UNIT
V
mA
mW
°C
°C
UNIT
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
S27–1/2


BAP65-02 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
BAP65-02
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
TYP.
τ L charge carrier life time
LS
Note
series inductance
when switched from I F =10 mA to
I R = 6 mA; R L = 100 ;
measured at I R =3 mA
I F =10 mA ; f =100MHz
0.17
0.6
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX. UNIT
µs
– nH
THERMALCHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
10
f = 100 MHz; T =25°C
j
1
10 -1
10 -1
1
I F (mA )
10
Fig.1 Forward resistance as a function of
forward current; typical values.
10 2
0
-0.1
-0.2
(1) I =0.5 mA.
F
(2) I F =1 mA.
-0.3 (3) I F = 5 mA.
(4) I = 10 mA.
F
(5) I F = 100mA.
-0.4
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-0.5
01 2
f (GHz )
3
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
1000
800
600
400
200
f = 1 MHz; T =25°C
j
0
04
8 12
VR(V)
16
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
20
0
- 10
- 20
- 30
- 40
0
Diode zero biased and inserted in
series with a 50 stripline circuit.
Tamb =25°C.
12
f (GHz )
3
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S27–2/2




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BAP65-02 diode

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