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NXP Semiconductors |
BAP51-02
General purpose PIN diode
Rev. 03 — 2 January 2008
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP Semiconductors
General purpose PIN diode
Product specification
BAP51-02
FEATURES
• Low diode capacitance
• Low diode forward resistance.
APPLICATIONS
• General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage 1
2
Top view
MAM405
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
Ts = 90 °C
MIN.
−
−
−
−65
−65
MAX. UNIT
60 V
50 mA
715
+150
+150
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
VR reverse voltage
IR reverse current
Cd diode capacitance
rD diode forward resistance
CONDITIONS
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
MIN.
−
50
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
MAX. UNIT
1.1 V
−V
100 nA
− pF
0.55 pF
0.35 pF
9Ω
6.5 Ω
2.5 Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 03 - 2 January 2008
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