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BAP51-02 반도체 회로 부품 판매점

General purpose PIN diode



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NXP Semiconductors
BAP51-02 데이터시트, 핀배열, 회로
BAP51-02
General purpose PIN diode
Rev. 03 — 2 January 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors


BAP51-02 데이터시트, 핀배열, 회로
NXP Semiconductors
General purpose PIN diode
Product specification
BAP51-02
FEATURES
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage 1
2
Top view
MAM405
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
Ts = 90 °C
MIN.
65
65
MAX. UNIT
60 V
50 mA
715
+150
+150
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
VR reverse voltage
IR reverse current
Cd diode capacitance
rD diode forward resistance
CONDITIONS
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
MIN.
50
TYP.
0.95
0.4
0.3
0.2
5.5
3.6
1.5
MAX. UNIT
1.1 V
V
100 nA
pF
0.55 pF
0.35 pF
9
6.5
2.5
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 03 - 2 January 2008
2 of 6




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BAP51-02 diode

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