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PDF BAL99LT1 Data sheet ( Hoja de datos )

Número de pieza BAL99LT1
Descripción Switching Diode
Fabricantes ON Semiconductor 
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BAL99LT1
Switching Diode
Features
ăPb-Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR 70 Vdc
Peak Forward Current
IF 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-ā5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
417
Junction and Storage Temperature TJ, Tstg
1. FR-ā5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
-ā55 to +150
°C/W
°C
ANODE
3
CATHODE
2
3
1
2
SOT-23
CASE 318
STYLE 18
MARKING DIAGRAM
JF MG
G
JF Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAL99LT1
BAL99LT1G
SOT-23
SOT-23
(Pb-Free)
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
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