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BA979S 반도체 회로 부품 판매점

Silicon PIN Diodes



Vishay Telefunken 로고
Vishay Telefunken
BA979S 데이터시트, 핀배열, 회로
www.vishay.com
BA979, BA979S
Vishay Semiconductors
RF PIN Diodes - Single in QuadroMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please
www.vishay.com/doc?99912
see
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BA979
BA979S
zr > 5 k
zr > 9 k
ORDERING CODE
BA979-GS18 or BA979-GS08
BA979S-GS18 or BA979S-GS08
TYPE MARKING
-
-
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward continuous current
VR 30
IF 50
UNIT
V
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Storage temperature range
Tj
Tstg
VALUE
500
125
- 55 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
IF = 20 mA
VR = 30 V
f = 100 MHz, VR = 0 V
f = 100 MHz, IF = 1.5 mA
f = 100 MHz, VR = 0 V
IF = 10 mA, IR = 10 mA
BA979
BA979S
VF
IR
CD
rf
zr
zr
5
9
TYP.
4
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Rev. 1.6, 21-May-12
1 Document Number: 85533
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BA979S 데이터시트, 핀배열, 회로
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
BA979, BA979S
Vishay Semiconductors
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0 0.4 0.8 1.2 1.6 2.0
95 9735
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
0.001
0.01
0.1
1
10
95 9734
IF - Forward Current (mA)
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
0 V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0 20 40 60 80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.6, 21-May-12
2 Document Number: 85533
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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BA979S diode

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