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1M160Z 반도체 회로 부품 판매점

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE



TRSYS 로고
TRSYS
1M160Z 데이터시트, 핀배열, 회로
1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Typical IR less than 5.0 A above 11V
l High temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-41
MECHANICAL DATA
Case: Molded plastic, DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation on TA=50 (Note A)
Derate above 50
Peak forward Surge Current 8.3ms single half sine-wave
superimposed on rated load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
SYMBOL
PD
IFSM
TJ,TSTG
VALUE
1.0
6.67
10
-55 to +150
UNITS
Watts
mW/
Amps
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.


1M160Z 데이터시트, 핀배열, 회로
1N4741A THRU 1M200Z
*ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2V max, IF=200mA for all types.
Type No.
(Note 1.)
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
1M110Z
1M120Z
1M130Z
1M150Z
1M160Z
1M180Z
1M200Z
Nominal Zener
Voltage Vz @ IZT
volts
(Notes2. And
3.)
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Test current
IZT
mA
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2
1.9
1.7
1.6
1.4
1.2
Maximum Zener Impedance (Note 4.)
ZZT @ IZT
Ohms
ZZk @ IZK
Ohms
IZK
mA
8.0
9.0
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
IR
A Max
VR
Volts
5.0 8.4
5.0 9.1
5.0 9.9
5.0 11.4
5.0 12.2
5.0 13.7
5.0 15.2
5.0 16.7
5.0 18.2
5.0 20.6
5.0 22.8
5.0 25.1
5.0 27.4
5.0 29.7
5.0 32.7
5.0 35.8
5.0 38.8
5.0 42.6
5.0 47.1
5.0 51.7
5.0 56.0
5.0 62.2
5.0 69.2
5.0 76.0
5.0 83.6
5.0 91.2
5.0 98.8
5.0 114.0
5.0 121.6
5.0 136.8
5.0 152.0
Surge Current
@ TA=25
Ir - mA
(Note 5.)
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
-
-
-
-
-
-
-
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener
voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining
the lead temperature (TL) at 30 ±1 , from the diode body.
4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when
an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.
5.Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak,
non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability
is as described in Figure 5.




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