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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D793
BZB984 series
Voltage regulator double diodes
Product specification
Supersedes data of 2001 Nov 28
2002 Jun 21
Philips Semiconductors
Voltage regulator double diodes
Product specification
BZB984 series
FEATURES
• Total power dissipation: max. 425 mW
• Approx. 5% VZ tolerance
• Ultra small flat plastic SMD package
• Working voltage range nom. 2.4 to 15 V (E24 range).
APPLICATIONS
• General regulation functions
• ESD and surge protection.
DESCRIPTION
Low-power voltage regulator diodes in a SOT663 ultra
small plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common anode
handbook, halfpage
3
3
12
1
Top view
2
MHC314
Fig.1 Simplified outline (SOT663) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
BZB984-C2V4
91 BZB984-C3V9
96 BZB984-C6V2
9B BZB984-C10
BZB984-C2V7
92 BZB984-C4V3
97 BZB984-C6V8
9C BZB984-C11
BZB984-C3V0
93 BZB984-C4V7
98 BZB984-C7V5
9D BZB984-C12
BZB984-C3V3
94 BZB984-C5V1
99 BZB984-C8V2
9E BZB984-C13
BZB984-C3V6
95 BZB984-C5V6
9A BZB984-C9V1
9F BZB984-C15
MARKING
CODE
9G
9H
9J
9K
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse
current
Ptot total power dissipation
PZSM
Tstg
Tj
non-repetitive peak reverse
dissipation
storage temperature
junction temperature
CONDITIONS
tp = 100 µs; square wave; Tamb = 25 °C;
prior to surge
Tamb = 25 °C; 2 diodes loaded; note 1
Tamb = 25 °C; 1 diode loaded; note 1
tp = 100 µs; square wave; Tamb = 25 °C;
prior to surge
MIN. MAX.
− 200
see Table 1
− 425
− 265
− 40
−65 +150
− 150
UNIT
mA
mW
mW
W
°C
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jun 21
2
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