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Voltage regulator double diodes



NXP Semiconductors 로고
NXP Semiconductors
BZB784-C6V8 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BZB784 series
Voltage regulator double diodes
Product specification
Supersedes data of 2000 May 24
2001 Feb 27


BZB784-C6V8 데이터시트, 핀배열, 회로
Philips Semiconductors
Voltage regulator double diodes
Product specification
BZB784 series
FEATURES
Total power dissipation: max. 350 mW
Approx. 5% VZ tolerance
Working voltage range: nom. 2.4 to 15 V (E24 range).
APPLICATIONS
General regulation functions
ESD and surge protection.
DESCRIPTION
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
PINNING SOT323 (SC-70)
PIN DESCRIPTION
1 cathode
2 cathode
3 common anode
handbook, halfpage
3
3
1
2
1
Top view
2
MAM407
Fig.1 Simplified outline and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
BZB784-C2V4
91 BZB784-C3V9
96 BZB784-C6V2
9B BZB784-C10
BZB784-C2V7
92 BZB784-C4V3
97 BZB784-C6V8
9C BZB784-C11
BZB784-C3V0
93 BZB784-C4V7
98 BZB784-C7V5
9D BZB784-C12
BZB784-C3V3
94 BZB784-C5V1
99 BZB784-C8V2
9E BZB784-C13
BZB784-C3V6
95 BZB784-C5V6
9A BZB784-C9V1
9F BZB784-C15
MARKING
CODE
9G
9H
9J
9K
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse current
Ptot total power dissipation; note 1
PZSM
Tstg
Tj
non-repetitive peak reverse
dissipation
storage temperature
junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
Tamb = 25 °C; 2 diodes loaded
Tamb = 25 °C; 1 diode loaded
tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
200
see Table 1
350
180
40
65 +150
150
UNIT
mA
mW
mW
W
°C
°C
2001 Feb 27
2




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