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IXBOD1 반도체 회로 부품 판매점

Breakover Diode Gen



IXYS 로고
IXYS
IXBOD1 데이터시트, 핀배열, 회로
Breakover Diode Gen1
(BOD1)
IXBOD1
VBO = 600-1000 V
IAVM =
0.9 A
VBO
[V]
600 ±50
700 ±50
800 ±50
900 ±50
1000 ±50
Standard Types
IXBOD1-06
IXBOD1-07
IXBOD1-08
IXBOD1-09
IXBOD1-10
A
Backside: isolated
K
Features / Advantages:
• Very low forward voltage drop
• Low leakage current
Applications:
• High voltage circuit protection
• Transient voltage protection
• Trigger device
• Power pulse generators
• Lightning and arcing protection
• Energy discharge circuits
• Battery overvoltage protection
• Solar array protection
Package: FP-Case
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Base plate: Plastic overmolded tab
• Reduced weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130822a
1-5


IXBOD1 데이터시트, 핀배열, 회로
IXBOD1
BOD1
Symbol
ID
VBO
IRMS
IFAVM
ISM
I2t
KT
KP
RthJA
IBO
IH
VH
(dv/dt)cr
(di/dt)cr
tq
VT
VT0
rT
Ratings
Definitions
Conditions
min. typ. max.
drain current
breakover voltage
RMS current
VD = 0.8·VBO
TVJ = 125°C
VBO (TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]
f = 50 Hz
Tamb = 50°C
pins soldered to printed circuit (conductor 0.035x2mm)
20 µA
V
1.4 A
maximum average forward current
0.9 A
maximum pulsed source current
tp = 0.1 ms; non repetitive
I2t value for fusing
tp = 0.1 ms
temperature coefficient of VBO
coefficient for energy per pulse EP (material constant)
Tamb = 50°C
Tamb = 50°C
200
2
2·10-3
700
A
A2s
K-1
K/Ws
thermal resistance junction to ambient natural convection
with air speed 2 m/s
60 K/W
45 K/W
breakover current
holding current
holding voltage
critical rate of rise of voltage
critical rate of rise of curent
turn-off time
forward voltage drop
threshold voltage
slope resistance
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
VD = 0.67·(VBO +100 V)
TVJ = 50°C
VD = VBO; IT = 80 A; f = 50 Hz
TVJ = 125°C
VD = 0.67·VBO; VR = 0 V; IT = 80 A TVJ = 125°C
dv/dt(lin.) = 200 V/µs; di/dt = -10 A/µs
IT = 5 A
TVJ = 125°C
for power-loss calculation only
TVJ = 125°C
15 mA
30 mA
4 8V
1000 V/µs
200 A/µs
150 µs
1.7 V
1.1 V
0.12
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130822a
2-5




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IXBOD1 diode

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