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BAS316 반도체 회로 부품 판매점

High-speed diode



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BAS316 데이터시트, 핀배열, 회로
High-speed diode
P b Lead(Pb)-Free
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323(SC76) SMD
plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 100 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
BAS316
S-BAS316
SOD– 323
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Marking
Shipping
BAS316
S-BAS316
BAS316
S-BAS316
Z9 3000 Tape & Reel
Z9 10000 Tape & Reel
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
t rr reverse recovery time
V fr forward recovery voltage
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
when switched from IF=10mA to I R= 10mA;
R L= 100Ω; measured at I R= 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
715
855
1
1.25
30
1
30
50
2
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
1.75
V
WEITRON
http://www.weitron.com.tw
1/3
03-Jul-2015


BAS316 데이터시트, 핀배열, 회로
BAS316
S-BAS316
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V RRM
VR
V R(RMS)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
RMS reverse voltage
CONDITIONS
MIN.
MAX.
10 0
75
53
UNIT
V
V
V
I F continuous forward current
I FRM repetitive peak forward current
I FSM non-repetitivepeak forwardcurrent square wave; T j =25°C prior to
surge; see Fig.3
t =1µs
t =1 ms
t =1 s
P tot total power dissipation
R JA thermal resistance junction to ambient air
T stg storage temperature
T j junction temperature
– 250 mA
– 500 mA
– 5A
– 1A
– 0.5 A
– 200 mW
– 625 C/W
-55 +150 °C
– 150 °C
100
80
60
40
20
0
0
25 50 75 100 125
TEMPERATURE (°C)
Fig.1 Steady State Power Derating
150
10 2
300
200
100
0
0
(1) T j = 150 °C; typical values.
(2)T j =25°C; typical values.
(3) T j =25°C; maximum values.
1
V F( V )
Fig.2 Forward current as a function of
forward voltage.
2
10
1
10 -1
1
Based on square wave currents;
T j =25°C prior to surge.
10
102 103
t P ( µs )
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
104
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BAS316 diode

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